Spreading-resistance temperature sensor on silicon-on-insulator

被引：24

作者：

Lai, PT ^{[1
]}

Li, B ^{[1
]}

Chan, CL ^{[1
]}

Sin, JKO ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期

关键词：

D O I：

10.1109/55.798053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on hulk silicon wafer. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 mu m) SOI SRT sensor can reach 450 degrees C, much higher than 350 degrees C of thick-film (10 mu m) SOI SRT sensor under the same current level, With complete oxide isolation, this sensor structure can be potentially used in low-power integrated sensors operating at temperatures as high as 450 degrees C.

引用

页码：589 / 591

页数：3

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