Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

被引：55
作者：
Kim, Seonghyun [1 ]
Park, Jubong [1 ]
Woo, Jiyong [2 ]
Cho, Chunhum [3 ]
Lee, Wootae [1 ]
Shin, Jungho [1 ]
Choi, Godeuni [2 ]
Park, Sangsu [3 ]
Lee, Daeseok [2 ]
Lee, Byoung Hun [1 ,3 ]
Hwang, Hyunsang [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwanu 500712, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Gwanu 500712, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2013年 / 107卷
基金：
新加坡国家研究基金会;
关键词：
Resistive memory (ReRAM); NbO2 threshold switching; Selection device; HIGH-SPEED; OXIDE; NANOCROSSBAR;
D O I：
10.1016/j.mee.2013.02.084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated a nanothin-NbO2-layer-based Pt/NbO2/Pt stack and investigated its threshold-switching characteristics, which can be attributed to metal-insulator-transition, at the nanoscale. The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 degrees C as well as excellent scalabilities both in terms of the active device area (diameter similar to 10 nm) and thickness (similar to 10 nm). In addition, the device also exhibited uniform switching behavior and high switching speeds (similar to 22 ns). These characteristics make the device suitable for use as a selection device in high density cross-point type structures for resistive switching memories (ReRAIVIs). (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：33 / 36
页数：4
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