Fabrication and optical properties of SnS thin films by SILAR method

被引:184
作者
Ghosh, Biswajit [1 ]
Das, Madhumita [1 ]
Banerjee, Pushan [1 ]
Das, Subrata [1 ]
机构
[1] Jadavpur Univ, Adv Mat & Solar Photovolta Div, Sch Energy Studies, Kolkata 700032, India
关键词
SnS; SILAR; thin film; photoluminescence;
D O I
10.1016/j.apsusc.2008.04.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 mu m thickness were grown on glass and ITO substrates by SILAR method using SnSO4 and Na2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码:6436 / 6440
页数:5
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