Evaluation of concentrator photovoltaic properties of GaInNAsSb solar cells for multijunction solar cell applications

被引：1

作者：

Miyashita, Naoya ^{[1
]}

Ahsan, Nazmul ^{[1
]}

Okada, Yoshitaka ^{[1
]}

机构：

[1] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

关键词：

TIME-RESOLVED PHOTOLUMINESCENCE; SERIES RESISTANCE; TEMPERATURE; ANTIMONY;

D O I：

10.7567/JJAP.54.08KE06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we focus on the growth and characterization of undoped GaInNAsSb layers in solar cells and also study their concentrator photovoltaic properties. Concentrated light current-voltage characteristics of three GaInNAsSb-based solar cells with various thicknesses of GaInNAsSb layers (t(i)) from 1.0 to 3.0 mu m were evaluated. The photogenerated carriers from the GaInNAsSb layers are well collected even for the t(i) = 2.0 and 3.0 mu m devices. The comparison of the solar cell parameters under high concentration conditions showed no significant difference among the devices. This behavior is consistent with the results of series resistance analyses. This suggests that the bulk resistance due to the GaInNAsSb thickness is a minor factor for the series resistance in the present devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

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