Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

被引：13

作者：

Miyamura, Yoshiji ^{[1
,2
]}

Harada, Hirofumi ^{[1
,3
]}

Jiptner, Karolin ^{[1
]}

Nakano, Satoshi ^{[3
]}

Gao, Bing ^{[3
]}

Kakimoto, Koichi ^{[3
]}

Nakamura, Kyotaro ^{[4
]}

Ohshita, Yoshio ^{[5
]}

Ogura, Atsushi ^{[4
]}

Sugawara, Shin ^{[6
]}

Sekiguchi, Takashi ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, MANA Nanoelect Mat Unit, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, Japan

[4] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

[5] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[6] Kyocera Corp, Higashiomi, Shiga 5278555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 06期

关键词：

SINGLE CRYSTALLINE SILICON; DIRECTIONAL SOLIDIFICATION; MONOCRYSTALLINE SILICON; GROWTH;

D O I：

10.7567/APEX.8.062301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown 50 cm(2) mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 mu s. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

共 17 条

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