Submicron InGaAs/InAlAs/InP high-electron mobility transistors for high-speed lightwave applications

被引：0

作者：

Weiner, JS ^{[1
]}

Wang, YC ^{[1
]}

Kuo, JM ^{[1
]}

Tsai, HS ^{[1
]}

Sivco, D ^{[1
]}

Cho, AY ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX) | 1999年 / 99卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have fabricated HEMTs using argon implant isolation that have device-to-device resistance similar to that measured for mesa-isolated HEMTs. The argon implant-isolated HEMTs have measured f(t) and f(max) of 140 GHz and 200 GHz. This performance is comparable to that of the mesa-isolated HEMTs. After de-embedding of the test pad capacitances f(t) is found to be 200 GHz.

引用

页码：135 / 140

页数：6

共 7 条

[1] ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS/INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING [J].

BAHL, SR ;

DELALAMO, JA .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :195-197

[2] Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization [J].

Fourre, H ;

Pesant, JC ;

Schuler, O ;

Cappy, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1008-1010

[3] An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMT's [J].

Otsuji, T ;

Murata, K ;

Enoki, T ;

Umeda, Y .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (09) :1321-1327

[4] 64Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs [J].

Otsuji, T ;

Yoneyama, M ;

Imai, Y ;

Enoki, T ;

Umeda, Y .

ELECTRONICS LETTERS, 1997, 33 (17) :1488-1489

[5]

SZE SM, 1990, HIGH SPEED SEMICONDU, P18

[6]

Weiner JS, 1998, ELEC SOC S, V98, P288

[7] FERMI LEVEL AND SURFACE-BARRIER OF GAXIN1-XAS ALLOYS [J].

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :170-171

← 1 →