Efficient second to ninth harmonic generation using megawatt peak power microchip laser

被引：21

作者：

Bhandari, R. ^{[1
]}

Tsuji, N. ^{[2
]}

Suzuki, T. ^{[3
]}

Nishifuji, M. ^{[2
]}

Taira, T. ^{[1
]}

机构：

[1] Natl Inst Nat Sci, Inst Mol Sci, Laser Res Ctr, Okazaki, Aichi 4448585, Japan

[2] Nippon Steel & Sumitomo Met, Futtsu, Chiba 2930011, Japan

[3] Nippon Steel Technores Corp, Futtsu, Chiba 2930011, Japan

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 23期

关键词：

NM;

D O I：

10.1364/OE.21.028849

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the design and use of a megawatt peak power Nd:YAG/Cr4+: YAG microchip laser for efficient second to ninth harmonic generation. We show that the sub-nanosecond pulse width region, between 100 ps and 1 ns, is ideally suited for efficient wavelength conversion. Using this feature, we report 85% second harmonic generation efficiency using lithium triborate (LBO), 60% fourth harmonic generation efficiency usingss-barium borate, and 44% IR to UV third harmonic generation efficiency using Type I and Type II LBO. Finally, we report the first demonstration of 118 nm VUV generation in xenon gas using a microchip laser. (C) 2013 Optical Society of America

引用

页码：28849 / 28855

页数：7

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