Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications

Low-frequency (1/f) noise has been characterized for the first time in TFSOI BiCMOS devices designed for low power high frequency applications. In the bipolar transistors, 1/f noise obeyed a square law dependence on base current and was proportional to the inverse of the area. Aside from the expected 1/f noise, we have also observed a bias dependent generation-recombination (G/R) noise component in a small portion of these TFSOI BJT's. The 1/f noise in the near-fully-depleted MOSFET's was found to be bias independent in both the linear and saturation region of operation. However, when operated in the subthreshold regime, extraneous generation-recombination (G/R) noise becomes apparent.