Characterization of neutral base recombination for SiGeHBTs

被引：1
作者：
Fu, J [1 ]
Bach, K [1 ]
机构：
[1] XFAB Semicond Foundries AG, D-99097 Erfurt, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期
关键词：
heterojunction bipolar transistor (HBT); lifetime; neutral base recombination (NBR); SiGe;
D O I：
10.1109/TED.2006.870573
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper, based on theoretical derivation of the expression for neutral base recombination (NBR) current, proposes a new characteristic parameter for NBR characterization and a method for estimating base minority-carrier lifetime for SiGe-base heterojunction bipolar transistors (HBTs). Furthermore, the proposed parameter is used to characterize the influence of NBR on the fabricated lightly base-doped SiGe and heavily base-doped SiGe:C HBTs. As a result, the base lifetimes are estimated to be around 2.0 and 0.10 ns; for the SiGe and SiGe:C HBTs, respectively.
引用
收藏
页码：844 / 850
页数：7
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