Characterization of neutral base recombination for SiGeHBTs

被引：1

作者：

Fu, J ^{[1
]}

Bach, K ^{[1
]}

机构：

[1] XFAB Semicond Foundries AG, D-99097 Erfurt, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期

关键词：

heterojunction bipolar transistor (HBT); lifetime; neutral base recombination (NBR); SiGe;

D O I：

10.1109/TED.2006.870573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper, based on theoretical derivation of the expression for neutral base recombination (NBR) current, proposes a new characteristic parameter for NBR characterization and a method for estimating base minority-carrier lifetime for SiGe-base heterojunction bipolar transistors (HBTs). Furthermore, the proposed parameter is used to characterize the influence of NBR on the fabricated lightly base-doped SiGe and heavily base-doped SiGe:C HBTs. As a result, the base lifetimes are estimated to be around 2.0 and 0.10 ns; for the SiGe and SiGe:C HBTs, respectively.

引用

收藏

页码：844 / 850

页数：7

相关论文

共 16 条

[1] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J].

CANALI, C ;

MAJNI, G ;

MINDER, R ;

OTTAVIANI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1045-1047

[2] Modeling of output resistance in SiGe heterojunction bipolar transistors with significant neutral base recombination [J].

Hamel, JS ;

Alison, RJ ;

Blaikie, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (05) :693-699

[3] Neutral base recombination and its influence on the temperature dependence of early voltage and current gain early voltage product in UHV/CVD SiGe heterojunction bipolar transistors [J].

Joseph, AJ ;

Cressler, JD ;

Richey, DM ;

Jaeger, RC ;

Harame, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) :404-413

[4] OUTPUT CONDUCTANCE OF BIPOLAR-TRANSISTORS WITH LARGE NEUTRAL-BASE RECOMBINATION CURRENT [J].

MCGREGOR, JM ;

ROULSTON, DJ ;

NOEL, JP ;

HOUGHTON, DC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) :2569-2575

[5]

Neamen D., 1992, Semiconductor Physics and Devices

[6] Low frequency conductance voltage analysis of Si/GexSi1-x/Si heterojunction bipolar transistors [J].

Neugroschel, A ;

Li, GX ;

Sah, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) :187-196

[7] Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBT's [J].

Niu, G ;

Cressler, JD ;

Joseph, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2499-2504

[8] Profile design considerations for minimizing base transit time in SiGe HBT's [J].

Patri, VS ;

Kumar, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1725-1731

[9]

Peter M. S., 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), P58, DOI 10.1109/BIPOL.1999.803525

[10] Analysis of parasitic barriers formed at SiGe/Si heterojunctions due to p-n junction displacement [J].

Roenker, KP ;

Todorova, D ;

Breed, A .

SOLID-STATE ELECTRONICS, 2002, 46 (10) :1473-1483