Voltage tunability of single-spin states in a quantum dot

被引：37

作者：

Bennett, Anthony J. ^{[1
]}

Pooley, Matthew A. ^{[1
,2
]}

Cao, Yameng ^{[1
,3
]}

Skoeld, Niklas ^{[1
]}

Farrer, Ian ^{[2
]}

Ritchie, David A. ^{[2
]}

Shields, Andrew J. ^{[1
]}

机构：

[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0GZ, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1038/ncomms2519

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy-levels in a single quantum dot by modifying how spins sense magnetic field. We find that the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.

引用

页数：5

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