Investigation of germanium quantum-well light sources

被引：11

作者：

Fei, Edward T. ^{[1
]}

Chen, Xiaochi ^{[1
]}

Zang, Kai ^{[1
]}

Huo, Yijie ^{[1
]}

Shambat, Gary ^{[1
]}

Miller, Gerald ^{[2
]}

Liu, Xi ^{[3
]}

Dutt, Raj ^{[2
]}

Kamins, Theodore I. ^{[1
]}

Vuckovic, Jelena ^{[1
]}

Harris, James S. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] APIC Corp, Culver City, CA 90230 USA

[3] Stanford Univ, Dept Mat Sci, Stanford, CA 94305 USA

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 17期

关键词：

GE; SI; LASERS; DIODE;

D O I：

10.1364/OE.23.022424

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time. (C) 2015 Optical Society of America

引用

页码：22424 / 22430

页数：7

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