Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

被引：4

作者：

Motlan ^{[1
]}

Goldys, EM ^{[1
]}

Dao, LV ^{[1
]}

机构：

[1] Macquarie Univ, Div Informat & Commun Sci, N Ryde, NSW 2109, Australia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期

关键词：

D O I：

10.1116/1.1445167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report results of photoluminescence (PL) of GaSb self-assembled quantum dots grown by metalorganic chemical vapor deposition on GaAs substrates. We examined the emission from dots with average height of (5+/-0.3) nm, width of (38+/-2) nm, and density of 1.3 X 10(10) cm(-2). We found the PL emission from quantum dots at 1.08 eV and from the wetting layer at 1.40 eV. The quantum dot peak energy is almost constant in the temperature range of 10-80 K suggesting that the interdot tunneling effects are insignificant. The emission from quantum dots is thermally more stable than the wetting layer emission. The results are in agreement with those commonly reported for molecular beam epitaxy grown samples. (C) 2002 American Vacuum Society.

引用

页码：291 / 294

页数：4

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