Oxygen effects on barium strontium titanate morphology and MOS device performance

被引：8

作者：

Abdel-Motaleb, Ibrahim ^{[1
]}

Akula, Bhavya ^{[1
]}

Leedy, Kevin ^{[2
]}

Cortez, Rebecca ^{[3
]}

机构：

[1] No Illinois Univ, Dept Elect Engn, De Kalb, IL 60115 USA

[2] USAF, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[3] Union Coll, Dept Mech Engn, Schenectady, NY 12308 USA

来源：

MATERIALS LETTERS | 2013年 / 92卷

关键词：

Atomic force microscopy; Physical vapor deposition; Electrical properties; THIN-FILMS; ELECTRICAL-PROPERTIES; DIELECTRIC-CONSTANT; PRESSURE; RF; DEPOSITION; PLD;

D O I：

10.1016/j.matlet.2012.11.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on oxygen's impact on the morphology of pulsed laser deposited barium strontium titanate (BST) thin films, and the influence of microstructure on fabricated BST capacitor's electrical properties. Variations in the O-2 chamber environment yielded distinct microstructures and dielectric constant values. The BST film deposited in a lower O-2 pressure environment was found to be polycrystalline with sharp grain boundaries, while a higher O-2 pressure environment film exhibited enhanced lateral growth and diffuse grain boundaries. The sample deposited in a higher O-2 pressure environment was found to exhibit low frequency characteristics in capacitance-voltage measurements even at 1 MHz. The sample deposited in a lower O-2 pressure environment was found to exhibit high frequency capacitance-voltage characteristics even at 1 kHz. The 1 mTorr O-2 environment devices yielded a dielectric constant of 432 compared with 32 for the 10 mTorr environment film. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：389 / 392

页数：4

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