Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (vol 101, 091601, 2012)

被引：0
|
作者：
Mazumder, B. [1 ]
Wong, M. H. [2 ]
Hurni, C. A. [1 ]
Zhang, J. Y. [1 ]
Mishra, U. K. [2 ]
Speck, J. S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期
关键词：
D O I：
10.1063/1.4766344
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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