Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

被引：0

作者：

Simanullang, Marolop ^{[1
]}

Wisna, Gde B. M. ^{[2
]}

Cao, Wei ^{[3
]}

Usami, Koichi ^{[1
]}

Banerjee, Kaustav ^{[3
]}

Oda, Shunri ^{[1
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo, Japan

[2] Bandung Inst Technol, Dept Engn Phys, Bandung, Indonesia

[3] Univ Calif, Dept Elect & Comp Engn, Oakland, CA USA

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm(2)/V.s were extracted from these nanowires.

引用

页码：116 / 117

页数：2

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