Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

被引：0

作者：

Simanullang, Marolop ^{[1
]}

Wisna, Gde B. M. ^{[2
]}

Cao, Wei ^{[3
]}

Usami, Koichi ^{[1
]}

Banerjee, Kaustav ^{[3
]}

Oda, Shunri ^{[1
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo, Japan

[2] Bandung Inst Technol, Dept Engn Phys, Bandung, Indonesia

[3] Univ Calif, Dept Elect & Comp Engn, Oakland, CA USA

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm(2)/V.s were extracted from these nanowires.

引用

页码：116 / 117

页数：2

共 50 条

[31] Parylene based bilayer flexible gate dielectric layer for top-gated organic field-effect transistors [J].

Shin, Eul-Yong ;

Choi, Eun-Young ;

Noh, Yong-Young .

ORGANIC ELECTRONICS, 2017, 46 :14-21

[32] Vertical surround-gated silicon nanowire impact ionization field-effect transistors [J].

Bjoerk, M. T. ;

Hayden, O. ;

Schmid, H. ;

Riel, H. ;

Riess, W. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[33] Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors [J].

Zhu, Maguang ;

Zhou, Jianshuo ;

Sun, Pengkun ;

Peng, Lian-Mao ;

Zhang, Zhiyong .

ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (40) :47756-47763

[34] Al back-gated graphene field-effect transistors for capacitive sensing applications based on quantum capacitance effect [J].

Ju, Wonbin ;

Lee, Sungbae .

AIP ADVANCES, 2022, 12 (09)

[35] Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors [J].

Carrion, Enrique A. ;

Serov, Andrey Y. ;

Islam, Sharnali ;

Behnam, Ashkan ;

Malik, Akshay ;

Xiong, Feng ;

Bianchi, Massimiliano ;

Sordan, Roman ;

Pop, Eric .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (05) :1583-1589

[36] BACK-GATED FIELD-EFFECT IN A DOUBLE HETEROSTRUCTURE MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

PATIL, MB ;

AGARWALA, S ;

MORKOC, H .

ELECTRONICS LETTERS, 1988, 24 (15) :925-926

[37] Top-gated graphene field-effect-transistors formed by decomposition of SiC [J].

Wu, Y. Q. ;

Ye, P. D. ;

Capano, M. A. ;

Xuan, Y. ;

Sui, Y. ;

Qi, M. ;

Cooper, J. A. ;

Shen, T. ;

Pandey, D. ;

Prakash, G. ;

Reifenberger, R. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[38] Top-gated graphene field-effect-transistors formed by decomposition of SIC [J].

Wu, Y. Q. ;

Ye, P. D. ;

Capano, M. A. ;

Xuan, Y. ;

Sui, Y. ;

Qi, M. ;

Cooper, J. A. ;

Shen, T. ;

Pandey, D. ;

Prakash, G. ;

Reifenberger, R. .

APPLIED PHYSICS LETTERS, 2008, 92 (08)

[39] Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate [J].

Jeong, Saebyuk ;

Lee, Hojoon ;

Lee, Jeong-Soo .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) :5159-5163

[40] Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates [J].

Ohno, Yasuhide ;

Kanai, Yasushi ;

Mori, Yuki ;

Nagase, Masao ;

Matsumoto, Kazuhiko .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)

← 1 2 3 4 5 →