Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

被引：0
作者：
Simanullang, Marolop [1 ]
Wisna, Gde B. M. [2 ]
Cao, Wei [3 ]
Usami, Koichi [1 ]
Banerjee, Kaustav [3 ]
Oda, Shunri [1 ]
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo, Japan
[2] Bandung Inst Technol, Dept Engn Phys, Bandung, Indonesia
[3] Univ Calif, Dept Elect & Comp Engn, Oakland, CA USA
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm(2)/V.s were extracted from these nanowires.
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页码：116 / 117
页数：2
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