Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

被引：0
|
作者：
Simanullang, Marolop [1 ]
Wisna, Gde B. M. [2 ]
Cao, Wei [3 ]
Usami, Koichi [1 ]
Banerjee, Kaustav [3 ]
Oda, Shunri [1 ]
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo, Japan
[2] Bandung Inst Technol, Dept Engn Phys, Bandung, Indonesia
[3] Univ Calif, Dept Elect & Comp Engn, Oakland, CA USA
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm(2)/V.s were extracted from these nanowires.
引用
收藏
页码：116 / 117
页数：2
相关论文
共 50 条
  • [1] Gate capacitance of back-gated nanowire field-effect transistors
    Wunnicke, Olaf
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [2] Contact resistance in top-gated graphene field-effect transistors
    Huang, Bo-Chao
    Zhang, Ming
    Wang, Yanjie
    Woo, Jason
    APPLIED PHYSICS LETTERS, 2011, 99 (03)
  • [3] Top-gated graphene field-effect transistors on SiC substrates
    Ma Peng
    Jin Zhi
    Guo JianNan
    Pan HongLiang
    Liu XinYu
    Ye TianChun
    Jia YuPing
    Guo LiWei
    Chen XiaoLong
    CHINESE SCIENCE BULLETIN, 2012, 57 (19): : 2401 - 2403
  • [4] Oxidation of silicon nanowires for top-gated field effect transistors
    Liu, Bangzhi
    Wang, Yanfeng
    Ho, Tsung-ta
    Lew, Kok-Keong
    Eichfeld, Sarah M.
    Redwing, Joan M.
    Mayer, Theresa S.
    Mohney, Suzanne E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (03): : 370 - 374
  • [5] Top-gated graphene field-effect transistors on SiC substrates
    MA Peng1
    2 Research & Development Center for Functional Crystals
    Chinese Science Bulletin, 2012, 57 (19) : 2401 - 2403
  • [6] Top-Gated Silicon Nanowire Transistors in a Single Fabrication Step
    Colli, Alan
    Tahraoui, Abbes
    Fasoli, Andrea
    Kivioja, Jani M.
    Milne, William I.
    Ferrari, Andrea C.
    ACS NANO, 2009, 3 (06) : 1587 - 1593
  • [7] Switching limits of top-gated carbon nanotube field-effect transistors
    Sanchez-Soares, A.
    Gilardi, C.
    Lin, Q.
    Kelly, T.
    Su, S. -K.
    Fagas, G.
    Greer, J. C.
    Pitner, G.
    Chen, E.
    SOLID-STATE ELECTRONICS, 2023, 202
  • [8] Frequency kesponse of top-gated carbon nanotube field-effect transistors
    Singh, DV
    Jenkins, KA
    Appenzeller, J
    Neumayer, D
    Grill, A
    Wong, HSP
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2004, 3 (03) : 383 - 387
  • [9] Top-gated field-effect transistor and rectifying diode operation of core-shell structured GaP nanowire devices
    Kim, BK
    Kim, JJ
    Lee, JO
    Kong, KJ
    Seo, HJ
    Lee, CJ
    PHYSICAL REVIEW B, 2005, 71 (15)
  • [10] Electrical Characteristics of the Back-gated Bottom-up Silicon Nanowire Field Effect Transistor
    Kim, DukSoo
    Jung, YoungChai
    Park, MiYoung
    Kim, ByungSung
    Hong, SuHeon
    Choi, MinSu
    Kang, MyungGil
    Yu, YunSeop
    Whang, DongMok
    Hwang, SungWoo
    2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 145 - +
12345