Spin transition in the fractional quantum Hall regime: Effect of the extent of the wave function

被引：6
|
作者：
Vanovsky, V. V. [1 ,2 ]
Khrapai, V. S. [1 ,2 ]
Shashkin, A. A. [1 ]
Pellegrini, V. [3 ,4 ]
Sorba, L. [3 ,4 ]
Biasiol, G. [5 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow District, Russia
[3] CNR, NEST, Ist Nanoscif, I-56127 Pisa, Italy
[4] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[5] CNR IOM, Lab TASC, I-34149 Trieste, Italy
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 08期
关键词：
DIMENSIONAL ELECTRON-GAS; COMPOSITE FERMIONS; STATES; SYSTEMS; PHASE; WELL;
D O I：
10.1103/PhysRevB.87.081306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor v = 2/3 in the two-dimensional electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters. DOI: 10.1103/PhysRevB.87.081306
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页数：5
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