Spin transition in the fractional quantum Hall regime: Effect of the extent of the wave function

被引：6

作者：

Vanovsky, V. V. ^{[1
,2
]}

Khrapai, V. S. ^{[1
,2
]}

Shashkin, A. A. ^{[1
]}

Pellegrini, V. ^{[3
,4
]}

Sorba, L. ^{[3
,4
]}

Biasiol, G. ^{[5
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow District, Russia

[3] CNR, NEST, Ist Nanoscif, I-56127 Pisa, Italy

[4] Scuola Normale Super Pisa, I-56127 Pisa, Italy

[5] CNR IOM, Lab TASC, I-34149 Trieste, Italy

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 08期

关键词：

DIMENSIONAL ELECTRON-GAS; COMPOSITE FERMIONS; STATES; SYSTEMS; PHASE; WELL;

D O I：

10.1103/PhysRevB.87.081306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor v = 2/3 in the two-dimensional electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters. DOI: 10.1103/PhysRevB.87.081306

引用

页数：5

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