One-step fabrication of ultrathin layered 1T@2H phase MoS2 with high catalytic activity based counter electrode for photovoltaic devices

被引：41
作者：
Silambarasan, K. [1 ]
Archana, J. [1 ]
Harish, S. [1 ,4 ]
Navaneethan, M. [1 ,2 ]
Ganesh, R. Sankar [1 ]
Ponnusamy, S. [1 ]
Muthamizhchelvan, C. [1 ]
Hara, K. [3 ,4 ]
机构：
[1] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, India
[2] SRM Inst Sci & Technol, Fac Engn & Technol, Nanotechnol Res Ctr NRC, Kattankulathur 603203, India
[3] Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
[4] Shizuoka Univ, Grad Sch Sci & Technol, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2020年 / 51卷
关键词：
M-MoS2; S-MoS2; Layered nanosheet; Catalytic; Power conversion; SENSITIZED SOLAR-CELLS; MOLYBDENUM-DISULFIDE; ASSISTED SYNTHESIS; NANOSHEETS; EFFICIENT; EXFOLIATION; PERFORMANCE; MONOLAYERS; STORAGE; FILMS;
D O I：
10.1016/j.jmst.2020.01.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The metallic phase of molybdenum disulfide (M-MoS2) and semiconductor phase of molybdenum disulfide (S-MoS2) was synthesized by hydrothermal method, using cetyltrimethylammonium bromide (CTAB) as a surfactant. The structural and elemental composition confirmed the formation of M-MoS2 and S-MoS2. From the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-MoS2 and 0.95 nm for S-MoS2 was observed. Fourier-transform infrared (FT-IR) spectral analysis was used to investigate the existence of CTAB functional group. The peak at 885 cm(-1) attributed to the CH3 bond which confirmed the presence of CTAB in the S-MoS2. The anodic and cathodic peak separation (E-pp) values of the counter electrode (CE) has showed at 468.28 mV (M-MoS2) and 540.87 mV (S-MoS2). The M-MoS2 thin film shows higher catalytic activity when compared to S-MoS2 due to more active sites and electronic conductivity. The power conversion efficiency of M-MoS2 CE based device exhibits higher efficiency compared to S-MoS2 CE based device. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码：94 / 101
页数：8
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