A SPDT RF Switch Small- and Large-signal Characteristics on TR-HR SOI Substrates

被引：0

作者：

Esfeh, B. Kazemi ^{[1
]}

Makovejev, S. ^{[2
]}

Allibert, F. ^{[3
]}

Raskin, J. -P. ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, B-1348 Louvain, Belgium

[2] Incize, Louvain, Belgium

[3] Soitec, Bernin, France

来源：

2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2017年

关键词：

RF switch; SOI; trap-rich (TR); RFeSI; SPDT; harmonic distortion; insertion loss; isolation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on-Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate.

引用

页数：3

共 4 条

[1] A SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI Substrates
Esfeh, Babak Kazemi
Rack, Martin
Makovejev, Sergej
Allibert, Frederic
Raskin, Jean-Pierre
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 543 - 550
[2] A 15 GHz CMOS RF switch employing large-signal impedance matching
Park, J
Ma, ZQ
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 186 - +
[3] Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design
Sattu, Ajay Kumar
Yang, Jinwei
Gaska, Remis
Khan, Md Bilal
Shur, Michael
Simin, Grigory
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (06) : 305 - 307
[4] Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates
程实
常永伟
高楠
董业民
费璐
魏星
王曦
Chinese Physics Letters, 2017, 34 (06) : 125 - 129

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