Cascode turn-off of field-controlled integrated thyristors

被引：3

作者：

Grekhov, I. V. ^{[1
]}

Rozhkov, A. V. ^{[1
]}

Kostina, L. S. ^{[1
]}

Zitta, N. F. ^{[2
]}

Matveev, V. I. ^{[2
]}

Mashovets, D. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] ZAO Svetlana Poluprovodniki, St Petersburg 194156, Russia

来源：

TECHNICAL PHYSICS | 2010年 / 55卷 / 01期

关键词：

SWITCHING CHARACTERISTICS;

D O I：

10.1134/S1063784210010275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today's power electronics, is considerably higher than that of conventional thyristor-type devices, which is a serious disadvantage of the former. Field-controlled integrated thyristors offering a low residual voltage, as with conventional thyristors, and, at the same time, low turn-on and turn-off power losses in the control circuit, as is the case with insulated-gate bipolar transistors, seem to be promising for high-voltage high-power applications. Turn-off of these devices in the cascode mode with a series-connected low-voltage powerful FET is studied.

引用

页码：154 / 157

页数：4

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