Use of a 3C-SiC buffer layer and vicinal substrates for the heteroepitaxial growth of MgO films on Si(001)

被引：0

作者：

Lee, SS ^{[1
]}

Lee, SY ^{[1
]}

Hyun, JS ^{[1
]}

Kim, CG ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Adv Mat Div, Thin Film Mat Lab, Taejon 305600, South Korea

来源：

CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 06期

关键词：

D O I：

10.1002/1521-3862(20021203)8:6<257::AID-CVDE257>3.0.CO;2-G

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: High-quality epitaxial MgO has been deposited from methylmagnesium tert-butoxide on Si(001) by high vacuum CVD. The use of 3C-SiC buffer layers, which are grown using 1,3-disilabutane and vicinal Si(001) substrates that are 4degrees and 6degrees off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).

引用

页码：257 / +

页数：4

共 50 条

[31] 3C-SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates [J].

Yan, Fei ;

Zheng, Youdou ;

Chen, Ping ;

Sun, Lan ;

Gu, Shulin ;

Zhu, Shunming ;

Li, Xuefei ;

Han, Ping .

Gaojishu Tongxin/High Technology Letters, 2002, 12 (11)

[32] Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates [J].

Kemper, R. M. ;

Weinl, M. ;

Mietze, C. ;

Haeberlen, M. ;

Schupp, T. ;

Tschumak, E. ;

Lindner, J. K. N. ;

Lischka, K. ;

As, D. J. .

JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) :84-87

[33] Crystallinity of 3C-SiC films grown on Si substrates [J].

Yagi, K. ;

Nagasawa, H. .

Materials Science Forum, 1998, 264-268 (pt 1) :191-194

[34] Crystallinity of 3C-SiC films grown on Si substrates [J].

Yagi, K ;

Nagasawa, H .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :191-194

[35] Stresses in 3C-SiC films grown on Si substrates [J].

Jacob, Chacko ;

Pirouz, Pirouz .

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, :275-278

[36] HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations [J].

Isshiki, Toshiyuki ;

Nishio, Koji ;

Abe, Yoshihisa ;

Komiyama, Jun ;

Suzuki, Shunichi ;

Nakanishi, Hideo .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1317-+

[37] The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates [J].

Teklinska, Dominika ;

Grodecki, Kacper ;

Jozwik-Biala, Iwona ;

Caban, Piotr ;

Olszyna, Andrzej ;

Strupinski, Wlodek .

JOURNAL OF CRYSTAL GROWTH, 2014, 401 :542-546

[38] Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer [J].

Park, CI ;

Kang, JH ;

Kim, KC ;

Suh, EK ;

Lim, KY ;

Nahm, KS .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) :1007-1011

[39] Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates [J].

Yun, J ;

Takahashi, T ;

Ishida, Y ;

Okumura, H .

JOURNAL OF CRYSTAL GROWTH, 2006, 291 (01) :140-147

[40] Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C-SiC Buffer Layers [J].

Sorokin, L. M. ;

Gutkin, M. Yu. ;

Myasoedov, A. V. ;

Kalmykov, A. E. ;

Bessolov, V. N. ;

Kukushkin, S. A. .

PHYSICS OF THE SOLID STATE, 2019, 61 (12) :2316-2320

← 1 2 3 4 5 →