Use of a 3C-SiC buffer layer and vicinal substrates for the heteroepitaxial growth of MgO films on Si(001)

被引：0

作者：

Lee, SS ^{[1
]}

Lee, SY ^{[1
]}

Hyun, JS ^{[1
]}

Kim, CG ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Adv Mat Div, Thin Film Mat Lab, Taejon 305600, South Korea

来源：

CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 06期

关键词：

D O I：

10.1002/1521-3862(20021203)8:6<257::AID-CVDE257>3.0.CO;2-G

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: High-quality epitaxial MgO has been deposited from methylmagnesium tert-butoxide on Si(001) by high vacuum CVD. The use of 3C-SiC buffer layers, which are grown using 1,3-disilabutane and vicinal Si(001) substrates that are 4degrees and 6degrees off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).

引用

页码：257 / +

页数：4

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