Strain relaxation in InAs/GaAs(111)A heteroepitaxy

被引：48
|
作者：
Ohtake, A [1 ]
Ozeki, M
Nakamura, J
机构：
[1] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan
[2] Angstrom Technol Partnership, ATP, Tsukuba, Ibaraki 3050046, Japan
[3] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 20期
关键词：
D O I：
10.1103/PhysRevLett.84.4665
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied strain-relaxation processes in InAs heteroepitaxy on GaAs(lll)A using rocking-curve analysis of reflection high-energy electron diffraction. Strain relaxation in the direction parallel to the surface occurs at similar to 1.5 bilayers (BL) thickness. On the other hand, the lattice constant in the direction normal to the surface remains almost unchanged below similar to 3 BL thickness and is estimated to be similar to 3.3 Angstrom. This value, slightly larger than that of bulk GaAs (3.26 Angstrom), does not quite reach the value predicted by classical elastic theory, 3.64 Angstrom. The present result has been supported by the first-principles total-energy calculations.
引用
收藏
页码：4665 / 4668
页数：4
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