Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

被引：47

作者：

Zaitsev, S. V. ^{[1
]}

Dorokhin, M. V. ^{[2
]}

Brichkin, A. S. ^{[1
]}

Vikhrova, O. V. ^{[2
]}

Danilov, Yu. A. ^{[2
]}

Zvonkov, B. N. ^{[2
]}

Kulakovskii, V. D. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

[2] Nizhniy Novgorod State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

JETP LETTERS | 2010年 / 90卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; JETP Letter; Spin Polarization; Zeeman Splitting; Luminescence Line;

D O I：

10.1134/S0021364009220056

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the s, p-d exchange interaction of carriers in the quantum well with Mn ions in the delta layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (T < 20 K).

引用

页码：658 / 662

页数：5

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