Evaluation of Piezoelectric Properties of Bi4Ti3O12Based Ceramics at High Temperature

被引:21
作者
Villegas, Marina [1 ]
Caballero, Amador C. [1 ]
Jardiel, Teresa [1 ]
Arago, Carmen [2 ]
Maudes, Jon [3 ]
Caro, Inaki [3 ]
机构
[1] CSIC, Dept Electroceram, Inst Ceram & Vidrio, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Fac Ciencias C 4, Dept Fis Mat, E-28049 Madrid, Spain
[3] INASMET, Prod Dev Business Unit, Particle Engn Dept, San Sebastian 20009, Spain
关键词
Bismuth titanate; high temperature piezoelectrics; ELECTRICAL-PROPERTIES; BISMUTH TITANATE; CONDUCTIVITY; SENSORS;
D O I
10.1080/00150190903412838
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nowadays many industries as aeronautic, aerospace, etc, are claiming for new sensors and actuators that can operate in hostile environments. PZT ceramics are the common materials used in piezoelectric devices, however their low Curie temperature prevents their use at high temperatures. Bi4Ti3O12-based ceramics show a great potential for high temperature applications. Although piezoelectric parameters of BIT ceramics are well described at room temperature, its behaviour at high temperatures is almost lacking. This paper describes an experimental set-up to measure the piezoelectric properties of high temperature piezoceramics up to 700 degrees C. The variation of piezoelectric parameters of W-doped BIT ceramics as a function of temperature indicates that their operating temperature extends up to 500 degrees C, surpassing the expected one (1/2 Tc) in more than 200 degrees C.
引用
收藏
页码:44 / 53
页数:10
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