Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy

被引：29

作者：

Zielinski, M. ^{[1
]}

Portail, M. ^{[2
]}

Roy, S. ^{[2
]}

Chassagne, T. ^{[1
]}

Moisson, C. ^{[1
]}

Kret, S. ^{[3
]}

Cordier, Y. ^{[2
]}

机构：

[1] NOVASiC, Savoie Technolac, F-73375 Le Bourget Du Lac, France

[2] UPR CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 165卷 / 1-2期

关键词：

Silicon carbide; Epitaxy of thin films; Gallium nitride; Chemical mechanical polishing; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; GROWTH; SILICON; GAN; REACTOR; STRAIN; CVD;

D O I：

10.1016/j.mseb.2009.02.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Various aspects of the elaboration of (1 1 1)oriented 3C-SiC films on silicon are discussed within a comparative study of different layer characteristics for (1 1 1) and (1 0 0) orientations. The dissimilarities between both orientations are pointed out. This includes the growth mode during the nucleation, the efficacy of defect heating during the growth, the dopant incorporation and the warping of the epiwafer. The results of 3C-SiC surface preparation by chemical mechanical polishing are also demonstrated. All the characteristics of (1 1 1) oriented layers are discussed from the point of view of the application of 3C-SiC/Si epiwafers as templates for nitride growth. The characteristics of AlGaN/GaN based high electron mobility transistor elaborated on 3C-SiC/Si template are presented to validate the template's concept. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：9 / 14

页数：6

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