Here we report the synthesis of graphene oxide nanoscrolls (GONS) with tunable dimensions via low and high frequency ultrasound solution processing techniques. GONS can be visualized as a graphene oxide (GO) sheet rolled into a spiral-wound structure and represent an alternative to traditional carbon nanomorphologies. The scrolling process is initiated by the ultrasound treatment which provides the scrolling activation energy for the formation of GONS. The GO and GONS dimensions are observed to be a function of ultrasound frequency, power density, and irradiation time. Ultrasonication increases GO and GONS C-C bonding likely due to in situ thermal reduction at the cavitating bubble-water interface. The GO area and GONS length are governed by two mechanisms; rapid oxygen defect site cleavage and slow cavitation mediated scission. Structural characterization indicates that GONS with tube and cone geometries can be formed with both narrow and wide dimensions in an industrial-scale time window. This work paves the way for GONS implementation for a variety of applications such as adsorptive and capacitive processes.
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Aboutalebi, Seyed Hamed
;
Gudarzi, Mohsen Moazzami
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Gudarzi, Mohsen Moazzami
;
Zheng, Qing Bin
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Zheng, Qing Bin
;
Kim, Jang-Kyo
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chen, Xiaobin
;
Tian, Fuyang
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Univ Sci & Technol Beijing, Inst Appl Phys, Beijing 100083, Peoples R China
Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, SwedenTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tian, Fuyang
;
Persson, Clas
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Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, Sweden
Univ Oslo, Dept Phys, N-0316 Oslo, NorwayTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Persson, Clas
;
Duan, Wenhui
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Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Duan, Wenhui
;
Chen, Nan-xian
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机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
Univ Sci & Technol Beijing, Inst Appl Phys, Beijing 100083, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Aboutalebi, Seyed Hamed
;
Gudarzi, Mohsen Moazzami
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h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Gudarzi, Mohsen Moazzami
;
Zheng, Qing Bin
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
Zheng, Qing Bin
;
Kim, Jang-Kyo
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Hong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chen, Xiaobin
;
Tian, Fuyang
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sci & Technol Beijing, Inst Appl Phys, Beijing 100083, Peoples R China
Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, SwedenTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tian, Fuyang
;
Persson, Clas
论文数: 0引用数: 0
h-index: 0
机构:
Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, Sweden
Univ Oslo, Dept Phys, N-0316 Oslo, NorwayTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Persson, Clas
;
Duan, Wenhui
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h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Duan, Wenhui
;
Chen, Nan-xian
论文数: 0引用数: 0
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机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
Univ Sci & Technol Beijing, Inst Appl Phys, Beijing 100083, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China