COMPARISON OF HIGH EFFICIENCY SOLAR CELLS ON LARGE AREA N-TYPE AND P-TYPE SILICON WAFERS WITH SCREEN-PRINTED ALUMINUM-ALLOYED REAR JUNCTION

被引：0
作者：
Saynova, D. S. [1 ]
Mihailetchi, V. D. [1 ]
Geerligs, L. J. [1 ]
Weeber, A. W. [1 ]
机构：
[1] ECN Solar Energy, NL-1755 ZG Petten, Netherlands
来源：
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Low-cost, high-efficiency, and large area n-type silicon cells can be processed based on the screen printed Aluminum-alloyed rear junction concept. This process uses fabrication techniques which are very close to the current industry-standard screen printed mc-Si cell process. We compare, by experimental tests and modeling, the differences of using n-type wafers and p-type wafers with this process. An independently confirmed record-high efficiency of 17.4% is achieved on n-type floatzone (FZ) silicon wafers (area 140 cm(2)). On p-type FZ wafers, with the same process 17.6% is obtained, and 16.8% on p-type Cz wafers. Model calculations allow us to identify the potential for further enhancement of the n-type cell efficiency to slightly above 18.0% by improving front surface passivation. We also discuss experimental characteristics of cells produced by this process from n-type multicrystalline wafers.
引用
收藏
页码：1661 / 1665
页数：5
相关论文
共 14 条
  • [1] [Anonymous], P 19 EUR PV SOL EN C
  • [2] Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon
    Bock, Robert
    Schmidt, Jan
    Brendel, Rolf
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (11)
  • [3] BUCK T, 2005, P 15 INT PHOT SCI EN, P297
  • [4] COTTER JE, 2005, 15 WORKSH CRYST SIL, P3
  • [5] CUEVAS A, 2003, P 3 WORLD C PHOT EN
  • [6] EBONG A, 2000, 10 WORKSH CRYST SIL, P234
  • [7] EBONG E, 2006, P 4 WORLD C PHOT EN
  • [8] Hacke P, 2004, P 19 EUR PHOT SOL EN, P1292
  • [9] KOPECEK R, 2006, P 4 WORLD C PHOT EN
  • [10] Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
    Macdonald, D
    Geerligs, LJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4061 - 4063
12