Through silicon vias filled with planarized carbon nanotube bundles

被引：46
|
作者：
Wang, Teng [1 ,2 ]
Jeppson, Kjell [1 ]
Olofsson, Niklas [3 ]
Campbell, Eleanor E. B. [4 ,5 ]
Liu, Johan [1 ,6 ,7 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] SHT Smart High Tech AB, SE-42834 Kallered, Sweden
[3] Univ Gothenburg, Dept Phys, SE-41296 Gothenburg, Sweden
[4] Univ Edinburgh, Sch Chem, Edinburgh EH9 3JJ, Midlothian, Scotland
[5] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[6] Shanghai Univ, Sch Mech Engn & Automat, Key Lab New Displays & Syst Applicat, Shanghai 200072, Peoples R China
[7] Shanghai Univ, Sch Mech Engn & Automat, SMIT Ctr, Shanghai 200072, Peoples R China
来源：
NANOTECHNOLOGY | 2009年 / 20卷 / 48期
基金：
瑞典研究理事会; 美国国家科学基金会;
关键词：
THROUGH-SILICON; INTERCONNECTS; GROWTH;
D O I：
10.1088/0957-4484/20/48/485203
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls
    Lu, Jingyu
    Miao, Jianmin
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2014, 11 (1-4) : 222 - 229
  • [32] Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects
    Katagiri, Masayuki
    Wada, Makoto
    Ito, Ban
    Yamazaki, Yuichi
    Suzuki, Mariko
    Kitamura, Masayuki
    Saito, Tatsuro
    Isobayashi, Atsunobu
    Sakata, Atsuko
    Sakuma, Naoshi
    Kajita, Akihiro
    Sakai, Tadashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
  • [33] Proposal and analysis of carbon nanotube based differential multibit through glass vias
    Kumar, Ajay
    Chandel, Rajeevan
    Dhiman, Rohit
    MICROELECTRONICS JOURNAL, 2022, 126
  • [34] Thermal Mismatch Induced Reliability Issues for Cu Filled Through-Silicon Vias
    De Messemaeker, Joke
    Croes, Kristof
    Vandevelde, Bart
    Velenis, Dimitrios
    Redolfi, Augusto
    Jourdain, Anne
    Beyer, Gerald
    Swinnen, Bart
    Beyne, Eric
    De Wolf, Ingrid
    2012 4TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2012,
  • [35] SPICE-Model of Multiwall Carbon Nanotube Through-Hole Vias
    D'Amore, Marcello
    Sarto, Maria Sabrina
    Tamburrano, Alessio
    2010 ASIA-PACIFIC INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY & TECHNICAL EXHIBITION ON EMC RF/MICROWAVE MEASUREMENTS & INSTRUMENTATION, 2010, : 1104 - 1107
  • [36] Proposal and analysis of carbon nanotube based differential multibit through glass vias
    Kumar, Ajay
    Chandel, Rajeevan
    Dhiman, Rohit
    Microelectronics Journal, 2022, 126
  • [37] Experimental and Numerical Investigation of Mechanical Properties of Electroplating Copper Filled in Through Silicon Vias
    Wu, Wei
    Qin, Fei
    An, Tong
    Chen, Pei
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2016, 6 (01): : 23 - 30
  • [38] A View on Annealing Behavior of Cu-Filled Through-Silicon Vias (TSV)
    Huang, Lingang
    Deng, Qi
    Li, Ming
    Feng, Xue
    Gao, Liming
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (07) : P389 - P392
  • [39] Copper-Filled Through-Silicon Vias With Parylene-HT Liner
    Tung Thanh Bui
    Watanabe, Naoya
    Cheng, Xiaojin
    Kato, Fumiki
    Kikuchi, Katsuya
    Aoyagi, Masahiro
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2016, 6 (04): : 510 - 517
  • [40] Transmission characteristics of multi-walled carbon nanotube-based through-silicon vias considering temperature effects
    Su, Jinrong
    Chen, Xinwei
    Han, Liping
    Yang, Rongcao
    Zhang, Wenmei
    IET MICROWAVES ANTENNAS & PROPAGATION, 2017, 11 (10) : 1424 - 1431
12345