Reconfigurable double-stub tuners using MEMS switches for intelligent RF front-ends

被引:80
作者
Papapolymerou, J
Lange, KL
Goldsmith, CL
Malczewski, A
Kleber, J
机构
[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA
[2] Raytheon Co, Tucson, AZ 85734 USA
[3] Raytheon Co, Dallas, TX 75243 USA
关键词
intelligent RF front-ends; reconrigurable tuner; RF microelectromechanical system (MEMS) switches;
D O I
10.1109/TMTT.2002.806513
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents novel planar dynamically reconfigurable double-stub tuners that utilize electrostatically activated microelectromechanical system (MEMS) switches. The tuners operate in the 10-20-GHz frequency range and have stubs that consist of a digital capacitor bank. Each bank has a predetermined number of capacitors that can be selected through the activation of appropriate MEMS switches. The value and number of capacitors is dictated by the range of loads that needs to be matched. Simulated and measured results from several designs are presented. A 4 bit x 4 bit tuner that can match loads with 1.5 Omega < Re {Z(L)} < 109 Omega and -107 Omega < Im{Z(L)} < 48 Omega at 20 GHz equivalent to three quadrants of the Smith chart and loads with 3 Omega < Re {Z(L)} < 94 Omega and -260 Omega < Im{Z(L)} < 91 Omega at 10 GHz is demonstrated for the first time, as well as other designs. The demonstrated tuners provide real-time reconfiguration and matching for RF loads that change values during system operation. Applications include the development of several novel highly integrated microwave/millimeter-wave circuits such as ultra-wide-band high output power and increased power-added-efficiency amplifiers, ultra-wide-band multipliers, and very broad-band antenna arrays. It is expected that these circuits will be part of future low-cost and low-power intelligent RF front-end microsystems and systems-on-a-chip.
引用
收藏
页码:271 / 278
页数:8
相关论文
共 22 条
[1]  
Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503
[2]  
Feng ZP, 1999, IEEE MTT-S, P1507, DOI 10.1109/MWSYM.1999.780240
[3]  
Goldsmith CL, 1999, INT J RF MICROW C E, V9, P362, DOI 10.1002/(SICI)1099-047X(199907)9:4<362::AID-MMCE7>3.0.CO
[4]  
2-H
[5]   Performance of low-loss RF MEMS capacitive switches [J].
Goldsmith, CL ;
Yao, ZM ;
Eshelman, S ;
Denniston, D .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08) :269-271
[6]  
Katehi LPB, 1998, IEEE MTT S INT MICR, P331, DOI 10.1109/MWSYM.1998.689386
[7]  
Katehi LPB, 1996, IEEE MTT-S, P1145, DOI 10.1109/MWSYM.1996.511232
[8]   Low-loss analog and digital micromachined impedance tuners at the Ka-band [J].
Kim, HT ;
Jung, SW ;
Kang, KT ;
Park, JH ;
Kim, YK ;
Kwon, YW .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) :2394-2400
[9]  
LANGE K, 2001, THESIS U ARIZONA TUC
[10]  
Lange KL, 2001, IEEE MTT S INT MICR, P337, DOI 10.1109/MWSYM.2001.966901