High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

被引:79
|
作者
Kim, T. W.
Choo, D. C.
No, Y. S.
Choi, W. K.
Choi, E. H.
机构
[1] Hanyang Univ, Res Inst Informat Display, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Thin Film Mat Res Ctr, Korea Inst Sci & Technol, Seoul 136701, South Korea
[3] Kwangwoon Univ, Dept Electrophys, PDP Res Ctr, Charged Part Beam & Plasma Lab, Seoul 139701, South Korea
关键词
Al-doped ZnO; resistivity; transmittance; work function; organic light-emitting devices;
D O I
10.1016/j.apsusc.2006.03.032
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Deposition of Al-doped ZnO (AZO) films with various film thicknesses on glass substrates was performed to investigate the feasibility of using AZO films as anode electrodes in organic light-emitting devices (OLEDs). The electrical resistivity of the AZO films with a 180-nm thickness was 4.085 x 10(-2) Omega cm, and the average optical transmittance in the visible range was 80.2%. The surface work function for the AZO films, determined from the secondary electron emission coefficients obtained with a focused ion beam, was as high as 4.62 eV. These results indicate that AZO films grown on glass substrates hold promise for potential applications as anode electrodes in high-efficiency OLEDs. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1917 / 1920
页数:4
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