Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures

被引：2
作者：
Cho, Il-Wook [1 ]
Ryu, Mee-Yi [1 ]
Song, Jin Dong [2 ]
机构：
[1] Kangwon Natl Univ, Dept Phys, Chunchon 24341, South Korea
[2] Korea Inst Sci & Technol, Ctr Optoelect Convergence Syst, Seoul 02792, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2017年 / 70卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
InP; Quantum structure; Photoluminescence; Time-resolved photoluminescence; THERMAL ESCAPE; DOTS; TIME; DEPENDENCE; DYNAMICS; SPECTRA;
D O I：
10.3938/jkps.70.785
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 A degrees C to 520 A degrees C. InP/InGaP QS samples grown at temperatures of 440 A degrees C - 480 A degrees C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 A degrees C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs; thus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 A degrees C, indicating an optimum growth temperature of 460 A degrees C.
引用
收藏
页码：785 / 790
页数：6
相关论文
共 24 条
[1]   Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots [J].
Boggess, TF ;
Zhang, L ;
Deppe, DG ;
Huffaker, DL ;
Cao, C .
APPLIED PHYSICS LETTERS, 2001, 78 (03) :276-278
[2]   Effect of an InGaP spacer layer on the luminescence properties of InP/InGaP quantum structures [J].
Byun, Hye Ryoung ;
Ryu, Mee-Yi ;
Song, Jin Dong ;
Lee, Chang-Lyoul .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (05) :811-815
[3]   Radiative recombination lifetime of excitons in thin quantum boxes [J].
Gotoh, H ;
Ando, H ;
Takagahara, T .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1785-1789
[4]   TEMPERATURE-DEPENDENCE OF THE RADIATIVE AND NONRADIATIVE RECOMBINATION TIME IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
GURIOLI, M ;
VINATTIERI, A ;
COLOCCI, M ;
DEPARIS, C ;
MASSIES, J ;
NEU, G ;
BOSACCHI, A ;
FRANCHI, S .
PHYSICAL REVIEW B, 1991, 44 (07) :3115-3124
[5]   High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy [J].
Ha, S. K. ;
Song, J. D. ;
Han, I. K. ;
Ko, D. Y. ;
Kim, S. Y. ;
Lee, E. H. .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (05) :3089-3092
[6]   Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates [J].
Karachinsky, LY ;
Pellegrini, S ;
Buller, GS ;
Shkolnik, AS ;
Gordeev, NY ;
Evtikhiev, VP ;
Novikov, VB .
APPLIED PHYSICS LETTERS, 2004, 84 (01) :7-9
[7]   Luminescence properties of InAs quantum dots formed by a modified self-assembled method [J].
Kim, Hee Yeon ;
Ryu, Mee-Yi ;
Kim, Jin Soo .
JOURNAL OF LUMINESCENCE, 2012, 132 (07) :1759-1763
[8]   Polarization anisotropy of exciton in self-assembled elliptical InP/InGaP quantum dots [J].
Kim, Inhong ;
Kiba, Takayuki ;
Murayama, Akihiro ;
Song, Jin Dong ;
Kyhm, Kwangseuk .
CURRENT APPLIED PHYSICS, 2015, 15 (06) :733-738
[9]   Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions [J].
Kim, S. Y. ;
Song, J. D. ;
Han, I. K. ;
Kim, T. W. .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) :5519-5522
[10]   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots [J].
Kong, LM ;
Cai, JF ;
Wu, ZY ;
Gong, Z ;
Niu, ZC ;
Feng, ZC .
THIN SOLID FILMS, 2006, 498 (1-2) :188-192
123