Gamma radiation effects in amorphous silicon and silicon nitride photonic devices

被引：40

作者：

Du, Qingyang ^{[1
]}

Huang, Yizhong ^{[1
]}

Ogbuu, Okechukwu ^{[1
]}

Zhang, Wei ^{[1
,2
]}

Li, Junying ^{[1
]}

Singh, Vivek ^{[1
]}

Agarwal, Anuradha M. ^{[1
]}

Hu, Juejun ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Ningbo Univ, Key Lab Photoelect Mat & Devices Zhejiang Prov, Ningbo 315211, Zhejiang, Peoples R China

来源：

OPTICS LETTERS | 2017年 / 42卷 / 03期

关键词：

WAVE-GUIDES; DAMAGE; CRYSTALLIZATION; RESONATORS;

D O I：

10.1364/OL.42.000587

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4 x 10(-3) in amorphous silicon and 5 x 10(-4) in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change. (C) 2017 Optical Society of America

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页码：587 / 590

页数：4

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