Gamma radiation effects in amorphous silicon and silicon nitride photonic devices

被引：34

作者：

Du, Qingyang ^{[1
]}

Huang, Yizhong ^{[1
]}

Ogbuu, Okechukwu ^{[1
]}

Zhang, Wei ^{[1
,2
]}

Li, Junying ^{[1
]}

Singh, Vivek ^{[1
]}

Agarwal, Anuradha M. ^{[1
]}

Hu, Juejun ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Ningbo Univ, Key Lab Photoelect Mat & Devices Zhejiang Prov, Ningbo 315211, Zhejiang, Peoples R China

来源：

OPTICS LETTERS | 2017年 / 42卷 / 03期

关键词：

WAVE-GUIDES; DAMAGE; CRYSTALLIZATION; RESONATORS;

D O I：

10.1364/OL.42.000587

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4 x 10(-3) in amorphous silicon and 5 x 10(-4) in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change. (C) 2017 Optical Society of America

引用

页码：587 / 590

页数：4

共 23 条

[1] RADIATION-DAMAGE STUDIES OF AMORPHOUS-SILICON PHOTODIODE SENSORS FOR APPLICATIONS IN RADIOTHERAPY X-RAY-IMAGING
ANTONUK, LE
BOUDRY, J
YORKSTON, J
WILD, CF
LONGO, MJ
STREET, RA
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 299 (1-3) : 143 - 146
[2] Planar waveguides with less than 0.1 dB/m propagation loss fabricated with wafer bonding
Bauters, Jared F.
Heck, Martijn J. R.
John, Demis D.
Barton, Jonathon S.
Bruinink, Christiaan M.
Leinse, Arne
Heideman, Rene G.
Blumenthal, Daniel J.
Bowers, John E.
[J]. OPTICS EXPRESS, 2011, 19 (24): : 24090 - 24101
[3] Total Ionizing Dose Effects on Silicon Ring Resonators
Bhandaru, S.
Hu, S.
Fleetwood, D. M.
Weiss, S. M.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) : 323 - 328
[4] Accelerated Oxidation of Silicon Due to X-ray Irradiation
Bhandaru, Shweta
Zhang, En Xia
Fleetwood, Daniel M.
Reed, Robert A.
Weller, Robert A.
Harl, Robert R.
Rogers, Bridget R.
Weiss, Sharon M.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 781 - 785
[5] Radiation damage of amorphous silicon, thin-film, field-effect transistors
Boudry, JM
Antonuk, LE
[J]. MEDICAL PHYSICS, 1996, 23 (05) : 743 - 754
[6] Radiation hardness of high-Q silicon nitride microresonators for space compatible integrated optics
Brasch, Victor
Chen, Qun-Feng
Schiller, Stephan
Kippenberg, Tobias J.
[J]. OPTICS EXPRESS, 2014, 22 (25): : 30786 - 30794
[7] Spontaneous and X-ray-Triggered Crystallization at Long Range in Self-Assembling Filament Networks
Cui, Honggang
Pashuck, E. Thomas
Velichko, Yuri S.
Weigand, Steven J.
Cheetham, Andrew G.
Newcomb, Christina J.
Stupp, Samuel I.
[J]. SCIENCE, 2010, 327 (5965) : 555 - 559
[8] Modeling of Radiation Effects in Silicon Photonic Devices
De Leonardis, Francesco
Troia, Benedetto
Campanella, Carlo Edoardo
Prudenzano, Francesco
Passaro, Vittorio M. N.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (05) : 2155 - 2168
[9] Dumon P., 2005, OPTICS PHOTONICS INT
[10] Effect of Radiation on a Mach-Zehnder Interferometer Silicon Modulator for HL-LHC Data Transmission Applications
El Nasr-Storey, Sarah Seif
Boeuf, Frederic
Baudot, Charles
Detraz, Stephane
Fedeli, Jean Marc
Marris-Morini, Delphine
Olantera, Lauri
Pezzullo, Giuseppe
Sigaud, Christophe
Soos, Csaba
Troska, Jan
Vasey, Francois
Vivien, Laurent
Zeiler, Marcel
Ziebell, Melissa
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) : 329 - 335

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