Ge/SiGe quantum well for photonic applications: modelling of the quantum confined Stark effect

被引：1
作者：
Isella, Giovanni [1 ]
Ballabio, Andrea [1 ]
Frigerio, Jacopo [1 ]
机构：
[1] Politecn Milan, Dipartimento Fis, L NESS, Via Anzani 42, I-22100 Como, Italy
来源：
SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V | 2016年 / 9891卷
关键词：
Germanium quantum wells; quantum confined Stark effect; electro-optical modulation; 1.3; MU-M; ELECTROABSORPTION; ABSORPTION;
D O I：
10.1117/12.2234982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ge quantum wells are emerging as a relevant material system for enabling fast and power-efficient optical modulation in the framework of Si-photonics. The need for reliable designs of QW structures, matching given operating wavelengths and bias voltages, calls for the implementation of modelling tools capturing the optical properties of SiGe heterostructures. Here we report on the calculation of the quantum confined Stark effect based on an eight-band k . p model. The obtained spectra are analysed and compared with experimental data showing a good agreement between calculation and measurements.
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页数：6
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