Analysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonators

被引：104

作者：

Calusine, G. ^{[1
]}

Melville, A. ^{[1
]}

Woods, W. ^{[1
]}

Das, R. ^{[1
]}

Stull, C. ^{[1
]}

Bolkhovsky, V. ^{[1
]}

Braje, D. ^{[1
]}

Hover, D. ^{[1
]}

Kim, D. K. ^{[1
]}

Miloshi, X. ^{[1
]}

Rosenberg, D. ^{[1
]}

Sevi, A. ^{[1
]}

Yoder, J. L. ^{[1
]}

Dauler, E. ^{[1
]}

Oliver, W. D. ^{[1
,2
,3
]}

机构：

[1] MIT, Lincoln Lab, 244 Wood St, Lexington, MA 02421 USA

[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 06期

关键词：

Compressive strength - Dielectric losses - Superconducting resonators - Titanium nitride - Dielectric materials - Quality control - Substrates;

D O I：

10.1063/1.5006888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here, we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 mu m in the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance. (C) 2018 Author(s).

引用

页数：5

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