Radial InP/InAsP Quantum Wells with High Arsenic Compositions on Wurtzite-InP Nanowires in the 1.3-μm Region

被引：0

作者：

Kawaguchi, Kenichi ^{[1
]}

Nakata, Yoshiaki ^{[1
]}

Ekawa, Mitsuru ^{[1
]}

Yamamoto, Tsuyoshi ^{[1
]}

Arakawa, Yasuhiko ^{[2
]}

机构：

[1] Fujitsu Labs Ltd, Morinosato Wakamiya 10-1, Atsugi, Kanagawa 2430197, Japan

[2] Univ Tokyo, INQIE & IIS, Meguro Ku, Tokyo 1538505, Japan

来源：

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

InP nanowire; wurtzite crystal; radial InP/InAsP quantum well; DOTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wurtzite (WZ) InP nanowires (NWs) with radial InP/InAsP quantum wells (QWs) having an arsenic composition in the rage of 0.43-0.60 were grown using metalorganic vapor phase epitaxy, and their optical properties were investigated. These InAsP QW layers with a high arsenic content and WZ crystal phase were successfully grown using WZ-InP NWs whose crystalline structure was controlled by sulphur doping. Photoluminescence (PL) of individual NWs with radial InP/InAsP QWs was clearly observed at room temperature. The PL wavelengths were successfully controlled by adjusting the radial QW thickness and arsenic composition of InAsP, and emissions in the 1.3-mu m region were demonstrated.

引用

页码：257 / 260

页数：4

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