Radial InP/InAsP Quantum Wells with High Arsenic Compositions on Wurtzite-InP Nanowires in the 1.3-μm Region

被引：0
|
作者：
Kawaguchi, Kenichi [1 ]
Nakata, Yoshiaki [1 ]
Ekawa, Mitsuru [1 ]
Yamamoto, Tsuyoshi [1 ]
Arakawa, Yasuhiko [2 ]
机构：
[1] Fujitsu Labs Ltd, Morinosato Wakamiya 10-1, Atsugi, Kanagawa 2430197, Japan
[2] Univ Tokyo, INQIE & IIS, Meguro Ku, Tokyo 1538505, Japan
来源：
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年
关键词：
InP nanowire; wurtzite crystal; radial InP/InAsP quantum well; DOTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wurtzite (WZ) InP nanowires (NWs) with radial InP/InAsP quantum wells (QWs) having an arsenic composition in the rage of 0.43-0.60 were grown using metalorganic vapor phase epitaxy, and their optical properties were investigated. These InAsP QW layers with a high arsenic content and WZ crystal phase were successfully grown using WZ-InP NWs whose crystalline structure was controlled by sulphur doping. Photoluminescence (PL) of individual NWs with radial InP/InAsP QWs was clearly observed at room temperature. The PL wavelengths were successfully controlled by adjusting the radial QW thickness and arsenic composition of InAsP, and emissions in the 1.3-mu m region were demonstrated.
引用
收藏
页码：257 / 260
页数：4
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