Low temperature rapid fabrication of magnesium silicide for thermoelectric application

被引:3
作者
Alinejad, Babak [1 ]
Ikeda, Teruyuki [1 ]
机构
[1] Ibaraki Univ, Mat Sci & Engn Dept, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 3168511, Japan
关键词
Mechanical activation; hot press; Mg2Si; low temperature synthesis; DOPED MG2SI; GROWTH; BI; PERFORMANCE; COSB3; PHASE;
D O I
10.1142/S1793604719500073
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A mechanism for rapid, single-step synthesis and fabrication of intermetallic compounds having brittle-ductile ingredients at low temperature is suggested. Employing this mechanism, highly pure, dense Mg2Si pellets were obtained using silicon nanoparticles and micron-sized magnesium particles as starting materials. Silicon nanoparticles chop magnesium particles and produce highly-activated mixture through a planetary ball-milling. Magnesium/silicon interface increases by increasing dispersity of silicon nano-particles in magnesium. Consequently, final product was prepared only by consolidation at 300 degrees C for 5 min without any post-treatment. The pure phase of Mg2Si with grain sizes about 200 nm and with no evidence of presence of MgO was achieved. The Seebeck coefficient, electrical and thermal conductivity were measured to be -220 mu VK-1, 72 Omega(-1)cm(-1)and 3.48 Wm(-1) K-1 at 823 K for nondoped Mg2Si, indicating that this method does not degrade the properties of the product, despite the fact that fabrication is performed rapidly and at low temperature.
引用
收藏
页数:4
相关论文
共 26 条
[21]   Thermoelectric properties of bi-doped Mg2Si semiconductors [J].
Tani, J ;
Kido, H .
PHYSICA B-CONDENSED MATTER, 2005, 364 (1-4) :218-224
[22]   Crystal growth of Mg2Si for IR-detector [J].
Tokairin, Toshio ;
Ikeda, Junya ;
Udono, Haruhiko .
JOURNAL OF CRYSTAL GROWTH, 2017, 468 :761-765
[23]   Growth mechanism and optical properties of semiconducting Mg2Si thin films [J].
Vantomme, A ;
Langouche, G ;
Mahan, JE ;
Becker, JP .
MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) :237-242
[24]   An inconvenient truth about thermoelectrics [J].
Vining, Cronin B. .
NATURE MATERIALS, 2009, 8 (02) :83-85
[25]   Thermoelectric Property Study of Nanostructured p-Type Half-Heuslers (Hf, Zr, Ti)CoSb0.8Sn0.2 [J].
Yan, Xiao ;
Liu, Weishu ;
Chen, Shuo ;
Wang, Hui ;
Zhang, Qian ;
Chen, Gang ;
Ren, Zhifeng .
ADVANCED ENERGY MATERIALS, 2013, 3 (09) :1195-1200
[26]   Phase Segregation and Superior Thermoelectric Properties of Mg2Si1-xSbx (0 ≤ x ≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis [J].
Zhang, Qiang ;
Su, Xianli ;
Yan, Yonggao ;
Xie, Hongyao ;
Liang, Tao ;
You, Yonghui ;
Tang, Xinfeng ;
Uher, Ctirad .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (05) :3268-3276