Fabrication of diamond/SiC composites by Si-vapor vacuum reactive infiltration

被引：49

作者：

Yang, Zhenliang ^{[1
]}

He, Xinbo ^{[1
]}

Wu, Mao ^{[1
]}

Zhang, Lin ^{[1
]}

Ma, An ^{[1
]}

Liu, Rongjun ^{[2
]}

Hu, Haifeng ^{[2
]}

Zhang, Yudi ^{[2
]}

Qu, Xuanhui ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Natl Univ Def Technol, Coll Aerosp & Mat Engn, Changsha 410073, Hunan, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 03期

关键词：

Powders: gas phase reaction; Composites; Thermal properties; SiC; HIGH-PRESSURE; SILICON; GRAPHITIZATION; CERAMICS; CRYSTALS; KINETICS;

D O I：

10.1016/j.ceramint.2012.08.084

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Diamond/SiC composites were fabricated by a rapid gaseous Si vacuum reactive infiltration of porous carbon-containing diamond preforms at 1600 degrees C for 1 h. The obtained composites consisted of diamond, beta-SiC and a small fraction of residual unreacted Si; nearly fully dense composites were achieved. Graphitization of diamond did not occur during the infiltration at 1600 degrees C under vacuum. The transgranular fracture mode of diamond crystals and the perfect interface between diamond and SiC suggested a strong interfacial bonding strength. Relatively-low coefficient of thermal expansion (3.6 x 10(-6)/K, 50-400 degrees C) and high thermal conductivity (562 W/m K) of diamond/SiC composites showed great potential for thermal management applications. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：3399 / 3403

页数：5