Electronic structure of Sb monolayers on the Mo(110) surface

被引:9
|
作者
Proskurin, D
Nikolaychik, A
Koval, IF
Yakovkin, IN
机构
[1] Natl Taras Shevchenko Univ Kyiv, Radiophys Dept, UA-03033 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 03期
关键词
D O I
10.1002/pssb.200541337
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We compare theory and experimental (LEED and EELS) studies of the atomic and electronic structure of adsorbed Sb layers on Mo(110). At half a monolayer coverage, Sb atoms occupy the "long-bridge" (hollow) sites forming the (1 x 2) film structure. At this coverage, a dramatic decrease of surface density of states in vicinity of Fermi level results in a quasi dielectric state of the surface. With increasing coverage, direct lateral interaction between Sb atoms becomes increasingly important and leads to push-out of some Sb atoms in the (2 x 3/2) surface unit cell from the adsorption sites that are favorable at lower coverages. Substantial overlap of orbitals of neighboring adatoms results in metallic state of adsorbed Sb film, as suggested from significant increase of DOS at Fermi level. In EEL spectra, the nonmetal to metal transition reveals itself also by appearance of the -7.8 eV peak, which may be explained by the interband transition from Sb s band to unoccupied p states above E-F. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:584 / 591
页数:8
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