Enhanced and persistent photoconductivity in vertical silicon nanowires and ZnS nanoparticles hybrid devices

被引：16

作者：

Ahmad, Mushtaq ^{[1
]}

Rasool, Kamran ^{[1
]}

Rafiq, M. A. ^{[1
]}

Hasan, M. M. ^{[1
]}

机构：

[1] Pakistan Inst Engn & Appl Sci, Micro & Nano Devices Grp, Dept Met & Mat Engn, Islamabad 45650, Pakistan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

ARRAYS; HETEROSTRUCTURES; PHOTODETECTORS; PERFORMANCE; UNIFORM; SWITCH;

D O I：

10.1063/1.4768784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe persistent photoconductivity, enhanced detectivity, responsivity, and external quantum efficiency (EQE) in hybrid ZnS nanoparticles (NPs) and vertical silicon nanowire (Si NW) devices. ZnS NPs (diameter similar to 30 nm) were prepared by co-precipitation method. Si NWs (length similar to 30 mu m, diameter similar to 30-400 nm) were prepared by electroless chemical etching. Hybrid device shows similar to 10, 3, and 10 times enhancement of EQE, detectivity, and responsivity, respectively, as compared with the Si NWs only devices. The enhancement is attributed to presence of low refractive index ZnS around Si NWs causing funneling of photon energy into Si NWs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768784]

引用

页数：4

共 41 条

[1] Applications of silicon nanowires functionalized with palladium nanoparticles in hydrogen sensors [J].