Interband transitions in [001]-(GaP)1(InP)m superlattices

被引:3
|
作者
Schubert, M
Schmidt, H
Sik, J
Hofmann, T
Gottschalch, V
Grill, W
Böhm, G
Wagner, G
机构
[1] Univ Leipzig, Fac Phys & Geosci, Solid State Opt Grp, D-01403 Leipzig, Germany
[2] Univ Leipzig, Semicond Phys Grp, D-01403 Leipzig, Germany
[3] Univ Leipzig, Semicond Chem Grp, D-01403 Leipzig, Germany
[4] Inst Oberflachenmodifizierung Leipzig EV, Leipzig, Germany
关键词
GaPInP-superlattice; ellipsometry; band structure; ordering;
D O I
10.1016/S0921-5107(01)00865-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the optical interband transitions of [001]-(GaP)(1)(InP)(m) monolayer superlattices on (001) InP for m = 5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E-0, E-0, + Delta(0), E-1, E-1 + A(1), and E-2 transitions from lineshape analysis of the pseudo dielectric function <epsilon>, The E-0 and E-0 + Delta(0) interband transitions depend on in due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with in = 1,...,14 confirm the observed dependence of the E-0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:125 / 128
页数:4
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