High temperature strength of silicon carbide sintered with 1 wt.% aluminum nitride and lutetium oxide

被引：32

作者：

Lim, Kwang-Young ^{[1
]}

Kim, Young-Wook ^{[1
]}

Nishimura, Toshiyuki ^{[2
]}

Seo, Won-Seon ^{[3
]}

机构：

[1] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 130743, South Korea

[2] Natl Inst Mat Sci, Sialon Grp, Tsukuba, Ibaraki 3050044, Japan

[3] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2013年 / 33卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

SiC; Strength; Microstructure-final; Grain boundaries; Hot-pressing; LPS-SIC CERAMICS; LIQUID-PHASE; MECHANICAL-PROPERTIES; OXYNITRIDE ADDITIVES; OXIDATION BEHAVIOR; FRACTURE-TOUGHNESS; MICROSTRUCTURE; RESISTANCE; DENSIFICATION; CREEP;

D O I：

10.1016/j.jeurceramsoc.2012.09.005

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A heat-resistant SiC ceramic was developed from submicron p-sic powders using a small amount (1 wt.%) of AlN-Lu2O3 additives at a molar ratio of 60:40. Observation of the ceramic using high-resolution transmission electron microscopy (HRTEM) showed a lack of amorphous films in both homophase (SiC-SiC) boundaries and junction areas. The junction phase consisted of Lu-Si-O elements, and the homophase boundaries contained Lu, Al, O, and N atoms as segregates. The ceramic maintained its room temperature (RT) strength up to 1600 degrees C. The flexural strength of the ceramic was 630 MPa and 633 MPa at RT and 1600 degrees C, respectively. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：345 / 350

页数：6

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