Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

被引：46
作者：
Napolitani, E
Coati, A
De Salvador, D
Carnera, A
Mirabella, S
Scalese, S
Priolo, F
机构：
[1] Univ Padua, INFM, I-35131 Padua, Italy
[2] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[3] Univ Catania, INFM, I-95129 Catania, Italy
[4] Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期
关键词：
D O I：
10.1063/1.1425458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The backflow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultrashallow junctions for the far future complementary metal-oxide-semiconductor technology nodes. (C) 2001 American Institute of Physics.
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页码：4145 / 4147
页数：3
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