EUV Photoresist Reference Metrology Using TEM Tomography

被引：1

作者：

Biedrzycki, Mark T. ^{[1
]}

Adiga, Umesh P. S. ^{[1
]}

Barnum, Andrew ^{[1
]}

Mousa, Alain ^{[2
]}

Arjavac, Jason ^{[1
]}

Haynes, Rose Marie ^{[1
]}

Charley, Anne-Laure ^{[2
]}

Leray, Phillipe ^{[2
]}

Batuk, Dmitry ^{[2
]}

机构：

[1] Thermo Fisher Sci, 5350 NE Dawson Creek Dr, Hillsboro, OR 97124 USA

[2] Imec, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXIV | 2020年 / 11325卷

关键词：

TEM; EUV Photoresist; Reference Metrology; Tomography; Automated Metrology; Resist Encapsulation;

D O I：

10.1117/12.2552139

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Process monitoring of extreme ultraviolet (EUV) photoresist requires critical dimension analysis and careful control of extracted parameters like line edge roughness (LER) and line width roughness (LWR). Automated SEM metrology typically provides estimates for these parameters, including critical dimensions and "shape," but at the cost of SEM exposure modifying the shape and size of the material systems. A method for acquiring and analyzing dense line structures using TEM tomography is proposed. Automation of the process from in-fab photoresist encapsulation through dual-beam lamella preparation to tomography acquisition is described, followed by a discussion of novel methods for volumetric reconstruction with metrology. Measurement capabilities are compared to CDSEM and AFM. Novel three-dimensional constructs illustrating process and property relationships in the lithography module are provided.

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