Dynamic properties of a 1.3 mu m light-emission-and-detection (LEAD) diode with a high mesa semi-insulating BH for subscriber TCM transmission

This paper describes the dynamic properties of a 1.3 mu m light-emission-and-detection (LEAD)) diode that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF) are described, A modulation bandwidth of 12 GHz in laser diode (LD) operation and a detection bandwidth of shout 2 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively, In hit error rate (BER) performance at 30 Mb/s, a receiver sensitivity (BER = 10(-8)) of -40.2 dBm is confirmed, and a switching characteristics of under 1 mu s from LD to PD operation is estimated by a circuit simulation.